Ordering number:5230
PNP Epitaxial Planar Silicon
Transistor
2SA1963
High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications
Features
· Low noise : NF=1.
5dB typ (f=1GHz).
· High gain : | S2le |2=9dB typ (f=1GHz).
· High cutoff frequency : fT=5GHz typ.
Package Dimensions
unit:mm 2018B
[2SA1963]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cut...