SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=11A Drain-Source ON Resistance :
G H
KP11N60D
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
A C
K D L
B
J
E N
RDS(ON)(Max)=0.
38 Qg(typ.
)= 20nC
@VGS=10V
F
F
M
DIM MILLIMETERS _ 0.
20 A 6.
60 + _ 0.
20 6.
10 + B _ 0.
30 5.
34 + C _ 0.
20 D 0.
70 + _ 0.
15 E 2.
70 + _ 0.
10 2.
30 + F 0.
96 MAX G 0.
90 MAX H _ 0.
20 1.
80 + J _ 0.
10 2.
30 + K _ 0.
10 0.
50 + L _ 0.
10 M 0.
50 + 0.
70 MIN N 0.
1 M...