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KP11N60D

KEC
Part Number KP11N60D
Manufacturer KEC
Description N-Channel MOSFET
Published Sep 21, 2013
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast swi...
Datasheet PDF File KP11N60D PDF File

KP11N60D
KP11N60D

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : G H KP11N60D N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N RDS(ON)(Max)=0.
38 Qg(typ.
)= 20nC @VGS=10V F F M DIM MILLIMETERS _ 0.
20 A 6.
60 + _ 0.
20 6.
10 + B _ 0.
30 5.
34 + C _ 0.
20 D 0.
70 + _ 0.
15 E 2.
70 + _ 0.
10 2.
30 + F 0.
96 MAX G 0.
90 MAX H _ 0.
20 1.
80 + J _ 0.
10 2.
30 + K _ 0.
10 0.
50 + L _ 0.
10 M 0.
50 + 0.
70 MIN N 0.
1 MAX O MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 ) SYMBOL VDSS VGSS ID 6.
9* ID...


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