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KP11N60F

KEC
Part Number KP11N60F
Manufacturer KEC
Description N-Channel MOSFET
Published Sep 21, 2013
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This Super Junc...
Datasheet PDF File KP11N60F PDF File

KP11N60F
KP11N60F

Overview
SEMICONDUCTOR TECHNICAL DATA General Description A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.
38 Qg(typ.
)= 20nC @VGS=10V O B E G DIM MILLIMETERS L M J R D N N MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 ) Q H SYMBOL VDSS VGSS ID RATING 600 30 11* 6.
9* UNIT V V 1 2 3 1.
GATE 2.
DRAIN 3.
SOURCE A B C D E F G H J K L M N O Q R _ 0.
2 10.
16 + _ 0.
2 15.
87 + _ 0.
2 2.
54 + _ 0.
1 0.
8 + _ 0.
1 3.
18 + _ 0.
1 3.
3 + _ 0.
2 12.
57 + _ 0.
1 0...


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