Preliminary Data Sheet ICE22N60W ICE22N60W N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies HALOGEN Product Summary ID rDS(on) FREE TA=25oC 22A Max Min Typ Typ BVDSS @Tjmax ID=250uA 650V VGS=10V 0.
14Ω VDS=480V 82nC D Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247 1:G, 2:D, 3:S, ...

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