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ICE22N60

Icemos
Part Number ICE22N60
Manufacturer Icemos
Description N-Channel Enhancement Mode MOSFET
Published Oct 8, 2013
Detailed Description Preliminary Data Sheet ICE22N60 ICE22N60 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Char...
Datasheet PDF File ICE22N60 PDF File

ICE22N60
ICE22N60

Overview
Preliminary Data Sheet ICE22N60 ICE22N60 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies HALOGEN Product Summary ID rDS(on) FREE TA=25oC 22A Max Min Typ Typ BVDSS @Tjmax ID=250uA 650V VGS=10V 0.
14Ω VDS=480V 82nC D Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal H...


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