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ICE22N60

Micross Components
Part Number ICE22N60
Manufacturer Micross Components
Description N-Channel MOSFET
Published Sep 24, 2016
Detailed Description ICE22N60 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High...
Datasheet PDF File ICE22N60 PDF File

ICE22N60
ICE22N60

Overview
ICE22N60 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 22A 650V 0.
14Ω 82nC Pin Description: TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, ...


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