2SB1116/2SB1116A
PNP General Purpose
Transistor
P b Lead(Pb)-Free
3 BASE COLLECTOR 2
1 2
1 EMITTER
3
TO-92
Maximum Ratings ( TA=25℃ C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCBO VCEO VEBO lC 1116 -60 -50 -6.
0 1000 1116A -80 -60 -6.
0 Unit V V V mA
THERMAL CHARACTERISTICS
Charact er ist ics Total Device Dissipation Alumina Substrate,TA=25°C Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 750 Unit mW °C °C
+150 -55 to +150
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (lC=-100μA, lE=0) Collector-Emitter Bre...