Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated
Transistors
2SB1119
FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) 2.
COLLECTOR 3.
EMITTER 1 2 3
TRANSISTOR (
PNP)
SOT-89
1.
BASE
Collector current -1 A ICM: Collector current (Pulse) ICP: -2 A Collector-base voltage -25 V V(BR)CBO: Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation...