SMD Type
Transistors
PNP Epitaxial Planar Silicon
Transistors 2SB1121
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Large current capacity and wide ASO.
Fast switching speed.
Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -30 -25 -6 -2 -5 500 150 -55 to +150 Unit V V V A A mW
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SMD Type
2SB...