Power
Transistors
2SB1193
Silicon
PNP epitaxial planar type darlington
Unit: mm
• High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
16.
7±0.
3
■ Features
7.
5±0.
2
φ 3.
1±0.
1
4.
2±0.
2
For midium-speed power switching Complementary to 2SD1773
0.
7±0.
1
10.
0±0.
2 5.
5±0.
2
4.
2±0.
2 2.
7±0.
2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Ra...