isc Silicon
PNP Power
Transistor
2SB1217
DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and
motor .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICP
Collector Current-Pulse
IB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃ PC
Collector Power Dissip...