Power
Transistors
2SB1623A
Silicon
PNP epitaxial planar type
For power amplification
9.
9±0.
3
Unit: mm
4.
6±0.
2 2.
9±0.
2
3.
0±0.
5
■ Features
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV
15.
0±0.
5
φ 3.
2±0.
1
13.
7±0.
2 4.
2±0.
2 Solder Dip
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −80 −80 −5 −4 −8 40 2.
0...