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2SB1623A

Panasonic
Part Number 2SB1623A
Manufacturer Panasonic
Description Silicon PNP epitaxial planar type Transistor
Published Oct 29, 2013
Detailed Description Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 ...
Datasheet PDF File 2SB1623A PDF File

2SB1623A
2SB1623A

Overview
Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification 9.
9±0.
3 Unit: mm 4.
6±0.
2 2.
9±0.
2 3.
0±0.
5 ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV 15.
0±0.
5 φ 3.
2±0.
1 13.
7±0.
2 4.
2±0.
2 Solder Dip ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −80 −80 −5 −4 −8 40 2.
0 150 −55 to +150 °C °C Unit V V V A A W 1.
4±0.
2 1.
6±0.
2 0.
8±0.
1 2.
6±0.
1 0.
55±0.
15 2.
54±0.
30 5.
08±0.
50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO VBE ICBO ICEO IEBO hFE1 hFE2 * Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 Transition frequency Turn-on time Storage time Fall time fT ton tstg tf Conditions IC = −30 mA, IB = 0 VCE = −3 V, IC = −3 A VCB = −80 V, IE = 0 VCE = −40 V, IB = 0 VEB = −5 V, IC = 0 VCE = −3 V, IC = − 0.
5 A VCE = −3 V, IC = −3 A IC = −3 A, IB = −12 mA IC = −5 A, IB = −20 mA VCE = −10 V, IC = − 0.
5 A, f = 1 MHz IC = −3 A, IB1 = −12 mA, IB2 = 12 mA VCC = −50 V 20 0.
3 2.
0 0.
5 1 000 1 000 10 000 −2 −4 MHz µs µs µs V Min −80 −2.
5 −200 −500 −2 Typ Max Unit V V µA µA mA  Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*: Rank classification Rank hFE2 R 1 000 to 2 500 Q P 2 000 to 5 000 4 000 to 10 000 Publication date: January 2003 SJD00301AED 1 Free Datasheet http://www.
data...


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