JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-92 Plastic-Encapsulate
Transistors
3DD13002/ 3DD13002B
FEATURE Power dissipation PCM: Collector current ICM: 900
TRANSISTOR (
NPN)
TO-92
1.
EMITTER
mW (Tamb=25℃)
2.
COLLECTOR
3.
BASE
3DD13002: 1 A 3DD13002B: 0.
8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) Collector-emitter saturation voltage Base-emitter...