JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-220 Plastic-Encapsulate
Transistors
3DD13007
TRANSISTOR£¨
NPN £© TO¡ª 220
FEATURES Power dissipation PCM : 2 W£¨ Tamb=25¡æ£© Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE£¨ 1£© DC current gain hFE£¨ 2£© Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Colle...