DF N1 0
PMCXB900UE
7 October 2013
10B -6
20 V, complementary N/P-channel Trench MOSFET
Product data sheet
1.
General description
Complementary N/P-channel enhancement mode Field-Effect
Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits
• • • •
Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.
7 V Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm ElectroStatic Discharge (ESD) protection 1 kV HBM
3.
Applications
• • • •
Relay driver High-speed line driver Level shifter Power management in battery-driven p...