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PMCXB900UE

NXP
Part Number PMCXB900UE
Manufacturer NXP
Description N/P-channel Trench MOSFET
Published Nov 7, 2013
Detailed Description DF N1 0 PMCXB900UE 7 October 2013 10B -6 20 V, complementary N/P-channel Trench MOSFET Product data sheet 1. Genera...
Datasheet PDF File PMCXB900UE PDF File

PMCXB900UE
PMCXB900UE

Overview
DF N1 0 PMCXB900UE 7 October 2013 10B -6 20 V, complementary N/P-channel Trench MOSFET Product data sheet 1.
General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • • • • Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.
7 V Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3.
Applications • • • • Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4.
Quick reference data Table 1.
Symbol RDSon Quick reference data Parameter drain-source on-state resistance drain-source on-state resistance drain-source voltage drain current Conditions VGS = 4.
5 V; ID = 600 mA; Tj = 25 °C Min Typ 470 Max 620 Unit mΩ TR1 (N-channel), Static characteris...


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