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PMCXB900UE

nexperia
Part Number PMCXB900UE
Manufacturer nexperia
Description complementary N/P-channel Trench MOSFET
Published Jul 5, 2019
Detailed Description PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Comp...
Datasheet PDF File PMCXB900UE PDF File

PMCXB900UE
PMCXB900UE

Overview
PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 30 June 2015 Product data sheet 1.
General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Very low threshold voltage for portable applications: VGS(th) = 0.
7 V • Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • ElectroStatic Discharge (ESD) protection > 1 kV HBM 3.
Applications • Relay driver • High-speed line driver • Level shifter • Power management in battery-driven portables 4.
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