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2SC5509

Part Number 2SC5509
Manufacturer Renesas
Description NPN SILICON RF TRANSISTOR
Published Nov 10, 2013
Datasheet 2SC5509




Features





• Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pi...






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