TJ11A10M3
MOSFETs Silicon P-Channel MOS (U-MOS)
TJ11A10M3
1.
Applications
• Switching Voltage
Regulators
2.
Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.
) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.
0 to -4.
0 V (VDS = -10 V, ID = -1 mA)
3.
Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
TO-220SIS
4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Not...