SMD Type
Transistors IC
100V N-Channel PowerTrench MOSFET KDD3670
TO-252
Unit: mm
+0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7
Features
34 A, 100 V.
RDS(ON) = 32m RDS(ON) = 35m @ VGS = 10 V
+0.
2 9.
70-0.
2
Low gate charge (57 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability
+0.
1 0.
80-0.
1
+0.
15 0.
50-0.
15
0.
127 max
+0.
28 1.
50-0.
1
+0.
25 2.
65-0.
1
+0.
15 5.
55-0.
15
2.
3
+0.
15 4.
60-0.
15
+0.
1 0.
60-0.
1
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1) Drain Current Pulsed Power dissipation @ TC=25 Power dissipation @ Ta=25...