Part Number
|
SW20N60 |
Manufacturer
|
SAMWIN |
Description
|
N-channel Power MOSFET |
Published
|
Dec 13, 2013 |
Detailed Description
|
SAMWIN
SW20N60
N-channel Power MOSFET
Features
■ High ruggedness MOSFET ■ RDS(ON) (Max 0.3Ω)@VGS=10V ■ Gate Charge (Ma...
|
Datasheet
|
SW20N60
|
Overview
SAMWIN
SW20N60
N-channel Power MOSFET
Features
■ High ruggedness MOSFET ■ RDS(ON) (Max 0.
3Ω)@VGS=10V ■ Gate Charge (Max 80 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-3P
BVDSS : 600V ID : 20A* RDS(ON) : 0.
3ohm
1
2
2 3 1
1.
Gate 2.
Drain 3.
Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electr...
Similar Datasheet