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SW20N50U

SEMIPOWER
Part Number SW20N50U
Manufacturer SEMIPOWER
Description MOSFET
Published Apr 20, 2017
Detailed Description SAMWIN SW20N50U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.27Ω)@VGS=10V ■ Gate Charge (Typ 10...
Datasheet PDF File SW20N50U PDF File

SW20N50U
SW20N50U

Overview
SAMWIN SW20N50U N-channel TO-3P MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.
27Ω)@VGS=10V ■ Gate Charge (Typ 103 nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-3P 12 3 1.
Gate 2.
Drain 3.
Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.
BVDSS : 500V ID : 20A RDS(ON) : 0.
27Ω 2 1 3 Order Codes Item 1 Sales Type SWW 20N50 Marking SW20N50U Package TO-3P Packaging TUBE Absolute maximum ratings Symbol Parameter VDSS Drain to Source Voltage ID Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) IDM Drain current pulsed VGS Gate to Source Voltage ...


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