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SW20N50D

Seawon
Part Number SW20N50D
Manufacturer Seawon
Description N-channel MOSFET
Published Dec 13, 2013
Detailed Description SW20N50D Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualifi...
Datasheet PDF File SW20N50D PDF File

SW20N50D
SW20N50D

Overview
SW20N50D Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification N-channel MOSFET BVDSS 500V ID 20A RDS(on) < 0.
3W Device SW20N50D Package TO-3PN Marking SW20N50D Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS TC = 25 ℃ TC = 100 ℃ ID IDM EAS IAR EAR TC = 25 ℃ Derate above 25 ℃ PD dv/dt TJ, TSTG TL SW20N50D 500 ±30 20 12.
4 80 770 20 31.
2 312 2.
5 4.
5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient October 2012 : Rev0 Symbol RqJC RqJA www.
seawontech.
com SW20N50D 0.
4 62.
5 Unit ℃/W ℃/W 1/5 Free Datasheet http://www.
datasheet4u.
com/ SW20N50D Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Gate-Source Leakage Current Reverse Gate-Source Leakage Current BVDSS IDSS IGSSF IGSSR VGS = 0 V, ID = 250 µA VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ----------1 10 100 -100 V µA µA nA nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 10 A VDS = 30 V, ID = 10 A 3 --- -0.
25 14 5 0.
30 -- V W S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.
0 MHz ---2880 283 10 ---pF pF pF SWITCHING ...


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