isc Silicon
PNP Power
Transistor
BD330
DESCRIPTION ·DC Current Gain-
: hFE= 85~375(Min)@ IC= -0.
5A ·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -20V(Min) ·Complement to type BD329 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Especially for battery equipped applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-32
V
VCEO
Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
15
W
150
℃
Tstg
Storage Temperature Rang...