N-Channel Shielded Gate Power Trench MOSFET
FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.1 mΩ Features Shielded Gate MOSFET Technology Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) Termination is Lead-f...
Fairchild Semiconductor