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FDMC8360L

ON Semiconductor
Part Number FDMC8360L
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Dec 19, 2023
Detailed Description MOSFET – N-Channel, Shielded Gate POWERTRENCH) 40 V, 80 A, 2.1 mW FDMC8360L General Description This N−Channel MOSFET i...
Datasheet PDF File FDMC8360L PDF File

FDMC8360L
FDMC8360L

Overview
MOSFET – N-Channel, Shielded Gate POWERTRENCH) 40 V, 80 A, 2.
1 mW FDMC8360L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.
This process has been optimized for the on−state resistance and yet maintain superior switching performance.
Features • Shielded Gate MOSFET Technology • Max RDS(on) = 2.
1 mW at VGS = 10 V, ID = 27 A • Max RDS(on) = 3.
1 mW at VGS = 4.
5 V, ID = 22 A • High Performance Technology for Extremely Low RDS(on) • Termination is Lead−Free • 100% UIL Tested • This Device is Pb−Free, Halide Free and is RoHS Compliant Application • DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current A −Continuous TC = 25°C 80 −Continuous TA = 25°C (Note 1a) 27 −Pulsed (Note 4) 240 EAS Single Pulse Avalanche Energy (Note 3) 294 mJ PD Power ...


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