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FDMC8360L

Fairchild Semiconductor
Part Number FDMC8360L
Manufacturer Fairchild Semiconductor
Description N-Channel Shielded Gate Power Trench MOSFET
Published Jan 12, 2014
Detailed Description FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFE...
Datasheet PDF File FDMC8360L PDF File

FDMC8360L
FDMC8360L

Overview
FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.
1 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 2.
1 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 3.
1 mΩ at VGS = 4.
5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application „ DC-DC Conversion Pin 1 Pin 1 S S S S G S S D D D G D D D D D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) TC = 25 °C TA = 25 °C (Note 1a) (Note 4) (Note 3) Ratings 40 ±20 80 27 240 294 54 2.
3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 2.
3 53 °C/W Package Marking and Ordering Information Device Marking FDMC8360L Device FDMC8360L Package Power33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.
fairchildsemi.
com ©2013 Fairchild Semiconductor Corporation FDMC8360L Rev.
C1 Free Datasheet http://www.
datasheet4u.
com/ FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source L...


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