2SC3858
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SA1494) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3858 200 200 6 17 5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=200V VEB=6V IC=50mA VCE=4V, IC=8A IC=10A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 100max 100max 200min
External Dimensions MT-200
36.
4±0.
3 24.
4±0.
2 2-ø3.
2±0.
1 9 7 21.
4±0.
3 2.
1 6.
0±0.
2
2SC3858
Unit
µA µA
V
a b
50min∗ 2.
5max 20typ 300typ V MHz pF
20.
0min
4.
0max
2 3 1.
05 +0.
2 -0.
1 5.
45±0.
1 B C E 5.
45±0.
1 0.
65 +0.
2 -0.
1 3.
...