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Part Number
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J659 |
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Manufacturer
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Sanyo |
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Description
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P-Channel Silicon MOSFET |
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Published
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Feb 17, 2014 |
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Detailed Description
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Ordering number : EN8584
2SJ659
P-Channel Silicon MOSFET
2SJ659
Features
• • • • •
General-Purpose Switching Device ...
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Datasheet
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J659
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Overview
Ordering number : EN8584
2SJ659
P-Channel Silicon MOSFET
2SJ659
Features
• • • • •
General-Purpose Switching Device Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --14 --56 1.
65 40 150 --55 to +150 85 --14 Unit V V A A W W °C °C mJ ...
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