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J603

NEC
Part Number J603
Manufacturer NEC
Description 2SJ603
Published Dec 16, 2013
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ603 is P-channel M...
Datasheet PDF File J603 PDF File

J603
J603

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
ORDERING INFORMATION PART NUMBER 2SJ603 2SJ603-S 2SJ603-ZJ 2SJ603-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES • Super low on-state resistance: RDS(on)1 = 48 mΩ MAX.
(VGS = −10 V, ID = −13 A) RDS(on)2 = 75 mΩ MAX.
(VGS = −4.
0 V, ID = −13 A) • Low input capacitance: Ciss = 1900 pF TYP.
(VDS = −10 V, VGS = 0 V) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan.
(TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) www.
DataSheet4U.
com VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg −60 V V A A W W °C °C A mJ (TO-262) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 m 20 m 25 m 70 50 1.
5 150 −55 to +150 −25 62.
5 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1.
PW ≤ 10 µs, Duty cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D14648EJ3V0DS00 (3rd edition) Date Published July 2002 NS CP(K) Printed in Japan The mark 5 shows major revised points.
© 2000, 2001 Free Datasheet http://www.
datasheet4u.
com/ 2SJ603 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capaci...


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