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J634

Sanyo Semicon Device
Part Number J634
Manufacturer Sanyo Semicon Device
Description 2SJ634
Published Apr 4, 2015
Detailed Description Ordering number : ENN0000 Preliminary Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ634 P-...
Datasheet PDF File J634 PDF File

J634
J634


Overview
Ordering number : ENN0000 Preliminary Features • Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
2SJ634 P-Channel Silicon MOSFET 2SJ634 DC / DC Converter Applications Package Dimensions unit : mm 2083B [2SJ634] 6.
5 5.
0 2.
3 4 0.
5 5.
5 1.
5 7.
0 0.
85 0.
7 1.
2 0.
8 1.
6 7.
5 0.
6 12 3 2.
3 2.
3 0.
5 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP Package Dimensions unit : mm 2092B [2SJ634] 6.
5 2.
3 5.
0 0.
5 4 0.
8 5.
5 1.
5 2.
5 7.
0 1.
2 0.
85 1 0.
6 2 3 2.
3 2.
3 0.
5 1.
2 0 to 0.
2 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.
,Ltd.
Semiconductor Company TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1802 TS IM AKIBA No.
0000-1/3 2SJ634 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward...


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