PHT6N06T
TrenchMOS™ standard level FET
M3D087
Rev.
02 — 03 February 2003
Product data
1.
Product profile
1.
1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHT6N06T in SOT223.
1.
2 Features
s Low on-state resistance s Fast switching
s Low QGD s Surface mounting package.
1.
3 Applications
s DC to DC converters
s General purpose switching.
1.
4 Quick reference data
s VDS ≤ 55 V s Ptot ≤ 8.
3 W
s ID ≤ 5.
5 A s RDSon ≤ 150 mΩ
2.
Pinning information
Table 1: Pin 1 2 3 4
Pinning - SOT223, simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
4
source (s)
drain (d)
Symbol
...