Part Number
|
HY1606AP |
Manufacturer
|
HOOYI |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Feb 27, 2014 |
Detailed Description
|
HY1606AP
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated ...
|
Datasheet
|
HY1606AP
|
Overview
HY1606AP
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/60A, RDS(ON)=10.
5 mΩ (typ.
) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
G
D
S
D
Applications
G
•
Power Management for Inverter Systems.
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
P HY1606A
ÿ YYWWJ G
P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL...
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