Power
Transistors
2SD2139
Silicon
NPN triple diffusion planar type
For high-current amplification ratio, power amplification
Unit: mm
s Features
13.
0±0.
2 4.
2±0.
2
5.
0±0.
1 10.
0±0.
2 1.
0
q q q
2.
5±0.
2
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C)
Ratings 80 60 6 6 3 1 15 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C
90°
1.
2±0.
1
18.
0±0.
5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage te...