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D2103

Hitachi Semiconductor
Part Number D2103
Manufacturer Hitachi Semiconductor
Description 2SD2103
Published Sep 9, 2008
Detailed Description 2SD2103 Silicon NPN Triple Diffused www.DataSheet4U.com Application Low frequency power amplifier Outline TO-220FM 2...
Datasheet PDF File D2103 PDF File

D2103
D2103

Overview
2SD2103 Silicon NPN Triple Diffused www.
DataSheet4U.
com Application Low frequency power amplifier Outline TO-220FM 2 1 1.
Base 2.
Collector 3.
Emitter 12 3 2.
2 kΩ (Typ) 3 2SD2103 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current www.
DataSheet4U.
com Symbol VCBO VCEO VEBO IC IC(peak) PC PC* 1 Rating 60 60 7 8 12 2 25 150 –55 to +150 Unit V V V A A W Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Tj Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 60 60 7 — — 1000 — — — — Typ — — — — — — — — — — Max — — — 10 10 20000 1.
5 3.
0 2.
0 3.
5 V V Unit V V V µA Test conditions IC = 0.
1 mA, IE = 0 IC = 25 mA, RBE = ∞ IE = 50 mA, IC = 0 VCB = 50 V, IE = 0 VCE = 50 V, RBE = ∞ VCE = 3 V, IC = 4 A* 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO ICBO ICEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1.
Pulse test.
hFE VCE(sat)1 ICE(sat)2 VBE(sat)1 VBE(sat)2 IC = 4 A, IB = 8 mA* IC = 4 A, IB = 8 mA* 1 IC = 8 A, IB = 80 mA* 1 1 IC = 8 A, IB = 80 mA* 1 See switching characteristic curve of 2SD1572.
2 2SD2103 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 20 10 www.
DataSheet4U.
com 0 50 100 Case temperature TC (°C) Area of Safe Operation 150 Collector current IC (A) 10 IC (max) 3 1.
0 0.
3 D (T C O C = per 25 at °C ion ) 0.
1 Ta = 25°C 1 shot pulse 0.
03 0.
3 1.
0 3 10 30 100 300 Collector to emitter voltage VCE (V) Typical Output Characteristics 5 5 3 2.
5 2 1.
5 Collector current IC (A) 4 3 1 TC = 25°C 0.
5 mA 2 1 IB = 0 0 1 2 3 4 5 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs.
Collector Current 10,000 DC current transfer ratio hFE 5,000 VCE = 3 V °C 2,...


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