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D2101

Hitachi Semiconductor
Part Number D2101
Manufacturer Hitachi Semiconductor
Description 2SD2101
Published Jul 1, 2014
Detailed Description 2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collec...
Datasheet PDF File D2101 PDF File

D2101
D2101

Overview
2SD2101 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1.
Base 2.
Collector 3.
Emitter 12 3 3 kΩ (Typ) 150 Ω (Typ) 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Tj Tstg 1 Rating 200 200 7 10 15 2 30 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 200 200 170 7 — — 1500 — — — — Typ — — — — — — — — — — — Max — — — — 10 50 — 1.
5 3.
0 2.
0 3.
5 V V Unit V V V V µA Test conditions I C = 0.
1 mA, IE = 0 I C = 25 mA, RBE = ∞ I C = 5 A, L = 5 mH I E = 50 mA, IC = 0 VCB = 180 V, IE = 0 VCE = 180 V, RBE = ∞ VCE = 3 V, IC = 5 A*1 I C = 5 A, IB = 10 mA*1 I C = 10 A, IB = 100 mA*1 I C = 5 A, IB = ...


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