Preliminary Data Sheet
2SK4146
MOS FIELD EFFECT
TRANSISTOR
Description
R07DS0130EJ0100 Rev.
1.
00 Sep 24, 2010
The 2SK4146 is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 10.
1 mΩ MAX.
(VGS = 10 V, ID = 40 A) • Low input capacitance ⎯ Ciss = 3500 pF TYP.
(VDS = 10 V)
Ordering Information
Part No.
1 2SK4146-S19-AY ∗ LEAD PLATING Pure Sn (Tin) PACKING 50 pcs/tube Package TO-220, S19 tube
Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC =...