isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC5171
DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.
) ·Complementary to 2SA1930 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180
V
VCEO
Collector-Emitter Voltage
180
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
Pc
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
20
W
150
℃
Tstg
Storage Temperatur...