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K4T51163QG

Part Number K4T51163QG
Manufacturer Samsung
Description 512Mb G-die DDR2 SDRAM
Published Apr 22, 2014
Detailed Description CSD18503Q5A www.ti.com SLPS358 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503Q5A 1 FEATUR...
Datasheet K4T51163QG




Overview
CSD18503Q5A www.
ti.
com SLPS358 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503Q5A 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.
5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 13 4.
3 VGS = 4.
5V VGS = 10V 1.
8 4.
7 3.
4 UNIT V nC nC mΩ mΩ V • • • • • • • • 2 ORDERING INFORMATION APPLICATIONS • • • DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor ...






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