Part Number
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K4T51163QG |
Manufacturer
|
Samsung |
Description
|
512Mb G-die DDR2 SDRAM |
Published
|
Apr 22, 2014 |
Detailed Description
|
CSD18503Q5A
www.ti.com SLPS358 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18503Q5A
1
FEATUR...
|
Datasheet
|
K4T51163QG
|
Overview
CSD18503Q5A
www.
ti.
com SLPS358 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18503Q5A
1
FEATURES
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY
Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.
5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 13 4.
3 VGS = 4.
5V VGS = 10V 1.
8 4.
7 3.
4 UNIT V nC nC mΩ mΩ V
• • • • • • • •
2
ORDERING INFORMATION
APPLICATIONS
• • • DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor ...
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