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K4T51163QG

Part Number	K4T51163QG
Manufacturer	Samsung
Description	512Mb G-die DDR2 SDRAM
Published	Apr 22, 2014
Detailed Description	CSD18503Q5A www.ti.com SLPS358 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503Q5A 1 FEATUR...
Datasheet	K4T51163QG PDF File

Overview

CSD18503Q5A www.
ti.
com SLPS358 – JUNE 2012 40V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503Q5A 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (4.
5V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 13 4.
3 VGS = 4.
5V VGS = 10V 1.
8 4.
7 3.
4 UNIT V nC nC mΩ mΩ V • • • • • • • • 2 ORDERING INFORMATION APPLICATIONS • • • DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control Device CSD18503Q5A Package SON 5-mm × 6-mm Plastic Package Media 13-Inch Reel Qty 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS VGS Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuou...

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