Part Number
|
HY1906P |
Manufacturer
|
HOOYI |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Apr 22, 2014 |
Detailed Description
|
HY1906P
N-Channel Enhancement Mode MOSFET
Features
• • • •
65V/130A RDS(ON) = 7.5 mΩ (typ.) @ VGS=10V
Pin Description
...
|
Datasheet
|
HY1906P
|
Overview
HY1906P
N-Channel Enhancement Mode MOSFET
Features
• • • •
65V/130A RDS(ON) = 7.
5 mΩ (typ.
) @ VGS=10V
Pin Description
100% avalanche tested
G
Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
D
S
D
Applications
G
• •
Switching application
Power Management for Inverter Systems.
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
P HY1906
G ÿ YYWWJ
P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free requirements of...
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