isc Silicon
NPN Power
Transistor
BDY46
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min.
) ·DC Current Gain-
: hFE=20(Min.
)@IC = 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
5V(Max)@ IC = 15A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Voltage
regulator ·Inverter ·Switching mode power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
600
V
VCES
Collector-Emitter Voltage
600
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
17
A
...