Production specification
Power
Transistor
FEATURES
z Low VCE(sat).
VCE(sat)=-0.
5V(Typ)(IC/IB=-2A/-0.
2A) z Complements the 2SD1760.
2SB1184
Pb
Lead-free
APPLICATIONS
z z Epitaxial planar type.
PNP silicon
transistor.
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter Collector-Base Volage Value Units
VCBO
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-3
A
ICP
Collector Power Dissipation
-4.
5
A
PC
Collector Power Dissipation
1
W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
W007 Rev.
A
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