HG
HG RF POWER
TRANSISTOR
Semiconductors
ROHS Compliance,Silicon
NPN POWER
TRANSISTOR
MRF1946A
.
.
.
designed for 12.
5 volt large–signal power amplifiers in commercial and industrial equipment.
ω High Common Emitter Power Gain ω Specified 12.
5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% ω Diffused Emitter Resistor Ballasting ω Characterized to 220 MHz ω Load Mismatch at High Line and Overdrive Conditions MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 255C Derate above 255C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO ...