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MRF1946A

HGSemi
Part Number MRF1946A
Manufacturer HGSemi
Description Silicon NPN POWER TRANSISTOR
Published May 9, 2014
Detailed Description HG HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR MRF1946A . . . designed for 1...
Datasheet PDF File MRF1946A PDF File

MRF1946A
MRF1946A

Overview
HG HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR MRF1946A .
.
.
designed for 12.
5 volt large–signal power amplifiers in commercial and industrial equipment.
ω High Common Emitter Power Gain ω Specified 12.
5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% ω Diffused Emitter Resistor Ballasting ω Characterized to 220 MHz ω Load Mismatch at High Line and Overdrive Conditions MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 255C Derate above 255C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Value 16 36 4.
0 8.
0 100 0.
57 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/5C 5C 5C CASE 145A–09, STYLE 1 MRF1946A CASE 211–07, STYLE 1 MRF1946 THERMAL CHARACTERISTICS Symbol RθJC Max 1.
75 Unit 5C/W ELECTRICAL CHARACTERISTICS (TC = 255C unless otherwise noted.
) Characteristic Symbol V(BR)CEO V(BR)CES V(BR)EBO ICES Min 16 36 4.
0 — Typ — — — — Max — — — 5.
0 Unit Vdc Vdc Vdc mAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.
0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 255C) ON CHARACTERISTICS DC Current Gain (IC = 1.
0 Adc, VCE = 5.
0 Vdc) hFE 40 75 150 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.
0 MHz) Cob — 75 100 pF FUNCTIONAL TESTS Common–Emitter Amplifier Power Gain (VCC = 12.
5 Vdc, Pout = 30 W, f = 175 MHz) Collector Efficiency (VCC = 12.
5 Vdc, Pout = 30 W, f = 175 MHz) Load Mismatch (VCC = 15.
5 Vdc, Pin = 2.
0 dB Overdrive, Load VSWR = 30:1) Gpe η ψ No Degradation in Power Output 10 60 11 70 — — dB % Note : Above parameters , ratings , limits and conditions are subject to change www.
HGSemi.
com Sep.
1998 http://www.
Data...


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