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MRF1946

Part Number	MRF1946
Manufacturer	ASI
Description	NPN SILICON RF POWER TRANSISTOR
Published	May 9, 2014
Detailed Description	MRF1946 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF1946 is Designed for 12.5 V 175 MHz Large-SignalPower Ampli...
Datasheet	MRF1946 PDF File

Overview

MRF1946 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF1946 is Designed for 12.
5 V 175 MHz Large-SignalPower Amplifier Applications.
PACKAGE STYLE .
380" 4L FLG B .
112 x 45° A FEATURES INCLUDE: • High Common Emitter Power Gain • Output Power = 30 W E B C D E C E Ø.
125 NOM.
FULL R J .
125 MAXIMUM RATINGS IC VCE VCB PDISS TJ TSTG θJC 8.
0 A 16 V 36 V 100 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.
75 °C/W DIM A B C D E F G H I J F G H I MINIMUM inches / mm MAXIMUM inches / mm .
220 / 5.
59 .
785 / 19.
94 .
720 / 18.
29 .
970 / 24.
64 .
004 / 0.
10 .
085 / 2.
16 .
160 / 4.
06 .
240 / 6.
10 .
230 / 5.
84 .
730 / 18.
54 .
980 / 24.
89 .
385 / 9.
78 .
006 / 0.
15 .
105 / 2.
67 .
180 / 4.
57 .
280 / 7.
11 .
255 / 6.
48 CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE Cob GPE η IC = 25 mA IC = 25 mA IE = 5.
0 mA VCE = 15 V IC = 1.
0 A VCB = 15 V TC = 25 °C TEST CONDITIONS VBE = 0 IB = 0 IC = 0 mA MINIMUM TYPICAL MAXIMUM 36 16 4.
0 5.
0 40 f = 1.
0 MHz f = 175 MHz 12 60 75 75 150 100 UNITS V V V mA --pF DB % VBE = 0 VCE = 5.
0 V IE = 0 mA Pout = 30 W VCC = 12.
5 V ψ VCC = 15.
5 V PIN = 2.
0 dB Overdrive No Degradation in Power Output Load VSWR = 30:1 ALL PHASE ANGLES A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
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