GT60J322
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT60J322
The 4th Generation Soft Switching Applications
Unit: mm
• •
Enhancement-mode Low saturation voltage: VCE (sat) = 1.
25 V (typ.
) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Screw torque DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IECF IECPF PC Tj Tstg Rating 600 ±25 60 120 60 120 200 150 −55~150 0.
8 Unit V V A
A
JEDEC
W °C °C N m
― ― 2-21F2C
JEITA TOSHIBA
Weight: 9.
75 g (typ.
)
Equivalent Circuit
Collector
Gat...