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GT60J323H

Toshiba
Part Number GT60J323H
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Jun 19, 2014
Detailed Description GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switchi...
Datasheet PDF File GT60J323H PDF File

GT60J323H
GT60J323H

Overview
GT60J323H TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J323H Current Resonance Inverter Switching Application Induction Heating Cooking Appliances Induction Heating Appliances • • • • • • Enhancement mode type High speed : tf = 0.
12 μs (typ.
) (IC = 60A) Low saturation voltage: VCE (sat) = 2.
1 V (typ.
) (IC = 60A) FRD included between emitter and collector Fourth generation IGBT TO-3P(LH) (Toshiba package name) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ±25 30 60 120 30 120 68 170 150 −55 to 150 Unit V V A A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2C Weight: 9.
75 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application...


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